收藏本站
?
Green
DMN5L06TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
ESD Protected Up To 2kV
Halogen and Antimony Free. “Green” Device (Note 3) ?
Qualified to AEC-Q101 standards for High Reliability
?
?
?
?
?
?
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
Drain
SOT523
D
Gate
Gate
G
S
ESD PROTECTED, 2kV
TOP VIEW
Protection
Diode
Source
Ordering Information (Note 4)
Equivalent Circuit
Top View
Part Number
DMN5L06TK-7
Case
SOT523
Packaging
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DAB = Product Type Marking Code
DAB
YM
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN5L06TK
Document number: DS30926 Rev. 5 - 2
1 of 6
www.diodes.com
July 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN5L06VA-7 MOSFET N-CH DUAL SOT-563
DMN5L06VAK-7 MOSFET N-CHAN DUAL 50V SOT-563
DMN5L06WK-7 MOSFET N-CH 50V 300MA SC70-3
DMN601DMK-7 MOSFET N-CH DUAL 60V 225MW SOT26
DMN601DWK-7 MOSFET N-CH DL 60V 200MW SOT-363
DMN601K-7 MOSFET N-CH 60V 300MA SOT23-3
DMN601TK-7 MOSFET N-CH 60V 300MA SOT-523
DMN601VK-7 MOSFET N-CH DL 60V 250MW SOT-563
相关代理商/技术参数
DMN5L06V 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06V-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN5L06VA 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VA-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN5L06VAK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VAK-7 功能描述:MOSFET 20V 280mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN5L06VK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VK-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube